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IPD09N03LBG PDF预览

IPD09N03LBG

更新时间: 2024-11-18 03:44:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
12页 411K
描述
OptiMOS㈢2 Power-Transistor

IPD09N03LBG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):57 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0142 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):58 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPD09N03LBG 数据手册

 浏览型号IPD09N03LBG的Datasheet PDF文件第2页浏览型号IPD09N03LBG的Datasheet PDF文件第3页浏览型号IPD09N03LBG的Datasheet PDF文件第4页浏览型号IPD09N03LBG的Datasheet PDF文件第5页浏览型号IPD09N03LBG的Datasheet PDF文件第6页浏览型号IPD09N03LBG的Datasheet PDF文件第7页 
IPD09N03lB G IPS09N03LB G  
Product Summary  
OptiMOS®2 Power-Transistor  
Features  
V DS  
30  
9.1  
50  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
m  
A
• N-channel, logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Superior thermal resistance  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
Type  
IPD09N03LB G  
IPS09N03LB G  
Package  
Marking  
PG-TO252-3-11  
09N03LB  
PG-TO251-3-11  
09N03LB  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
50  
42  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
200  
57  
E AS  
I D=50 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=50 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
58  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
Rev. 1.5  
page 1  
2006-05-15  

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