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IPD100N04S4-02 PDF预览

IPD100N04S4-02

更新时间: 2024-11-18 11:08:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 156K
描述
OptiMOS-T2 Power-Transistor

IPD100N04S4-02 数据手册

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IPD100N04S4-02  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
2.0  
100  
V
R DS(on),max  
I D  
m  
A
Features  
• N-channel - Enhancement mode  
PG-TO252-3-313  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPD100N04S4-02  
PG-TO252-3-313 4N0402  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
100  
100  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
400  
440  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=50A  
mJ  
A
-
100  
VGS  
Ptot  
-
±20  
V
T C=25°C  
Power dissipation  
150  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2010-04-13  

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