是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.71 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 75 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 50 A | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.0148 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 63 W |
最大脉冲漏极电流 (IDM): | 350 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPD09N03LA | INFINEON |
类似代替 |
OptiMOS 2 Power-Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD09N03LAGBUMA1 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 25V, 0.0148ohm, 1-Element, N-Channel, Silicon, Me | |
IPD09N03LBG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPD100N04S4-02 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPD100N04S402ATMA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPD100N04S4L-02 | INFINEON |
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车规级MOSFET | |
IPD100N06S4-03 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPD100N06S403ATMA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, M | |
IPD1-02-D | SAMTEC |
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POWER HOUSING MINI MATE | |
IPD1-02-DCC79L2024-01-S | SAMTEC |
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Board Connector, 4 Contact(s), 2 Row(s), Female, IDC Terminal, ROHS COMPLIANT | |
IPD1-02-DCC79L2630-01-S | SAMTEC |
获取价格 |
Board Connector, 4 Contact(s), 2 Row(s), Female, IDC Terminal, ROHS COMPLIANT |