Datasheet > IPD096N08N3 G

IPD096N08N3 G

更新时间： 2024-11-19 14:54:31

品牌	Logo	应用领域
英飞凌 - INFINEON		通信服务器
页数	文件大小	规格书
9页	354K
描述
OptiMOS? 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。

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IPD096N08N3 G 数据手册

IPD096N08N3 G

OptiMOS^(TM)3 Power-Transistor

Product Summary

Features

V_DS

9.6

• Ideal for high frequency switching

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

R_DS(on),max

I_D

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

• Halogen-free according to IEC61249-2-21

Type

IPD096N08N3 G

Package

Marking

PG-TO252-3

096N08N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

292

Avalanche energy, single pulse³⁾

Gate source voltage

I _D=46 A, R _GS=25 W

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

100

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3 for more detailed information

³⁾See figure 13 for more detailed information

Rev. 2.2

page 1

2014-05-19

12 3 4 5 6 7...9

中文翻译

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