型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD088N06N3G | INFINEON |
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OptiMOS(TM)3 Power-Transistor |
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IPD088N06N3GBTMA1 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Me |
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IPD090N03L | INFINEON |
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OptiMOS®3 Power-Transistor Features Fast swit |
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IPD090N03L G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 |
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IPD090N03LG | INFINEON |
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OptiMOS®3 Power-Transistor Features Fast swit |
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IPD090N03LG_10 | INFINEON |
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OptiMOS3 Power-Transistor |
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IPD090N03LGATMA1 | INFINEON |
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Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me |
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IPD090N03LGE8177 | INFINEON |
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OptiMOS?3 Power-Transistor |
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IPD096N08N3 G | INFINEON |
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OptiMOS? 系列是高效率解决方案的市场领导者,适用于发电(例如太阳能微逆变器)、电源 |
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IPD096N08N3G | INFINEON |
获取价格 |
OptiMOS(TM)3 Power-Transistor |
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