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IHW40N60R PDF预览

IHW40N60R

更新时间: 2024-11-18 19:51:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网功率控制晶体管
页数 文件大小 规格书
12页 787K
描述
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN

IHW40N60R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:6.79
最大集电极电流 (IC):80 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5.7 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):305 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):264 nsBase Number Matches:1

IHW40N60R 数据手册

 浏览型号IHW40N60R的Datasheet PDF文件第2页浏览型号IHW40N60R的Datasheet PDF文件第3页浏览型号IHW40N60R的Datasheet PDF文件第4页浏览型号IHW40N60R的Datasheet PDF文件第5页浏览型号IHW40N60R的Datasheet PDF文件第6页浏览型号IHW40N60R的Datasheet PDF文件第7页 
IHW40N60R  
IH-series  
Reverse conducting IGBT  
C
Features:  
• Powerful monolithic body diode with low forward voltage  
designed for soft commutation only  
TrenchStop® technology applications offers:  
- very tight parameter distribution  
G
E
- high ruggedness, temperature stable behavior  
- low VCEsat  
- easy parallel switching capability due to positive  
temperature coefficient in VCEsat  
• Low EMI  
• Qualified according to JEDEC J-STD-020  
and JESD-022 for target applications  
• Pb-free lead plating; RoHS compliant  
• Complete product spectrum and PSpice Models:  
http://www.infineon.com/igbt/  
Applications:  
• Inductive cooking  
Type  
V†Š  
I†  
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà  
Marking  
H40R60  
Package  
IHW40N60R  
600V  
40A  
1.65V  
175°C  
PG-TO247-3  
Maximum ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
V†Š  
600  
V
DC collector current, limited by TÝÎÑÈà  
T† = 25°C  
T† = 100°C  
I†  
80.0  
40.0  
A
Pulsed collector current, tÔ limited by TÝÎÑÈà  
I†ÔÛÐÙ  
-
120.0  
120.0  
A
A
Turn off safe operating area V†Š = 600V, TÝÎ= 175°C  
Diode forward current, limited by TÝÎÑÈà  
T† = 25°C  
T† = 100°C  
IŒ  
80.0  
40.0  
A
Diode pulsed current, tÔ limited by TÝÎÑÈà  
Gate-emitter voltage  
IŒÔÛÐÙ  
V•Š  
120.0  
±20  
A
V
Power dissipation T† = 25°C  
Power dissipation T† = 100°C  
305.0  
152.5  
PÚÓÚ  
W
Operating junction temperature  
Storage temperature  
TÝÎ  
-40...+175  
-55...+175  
°C  
°C  
TÙÚÃ  
Soldering temperature,  
wavesoldering 1.6 mm (0.063 in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
Rev 2.4 2009-12-02  
1

IHW40N60R 替代型号

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IKW40N120H3 INFINEON

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