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IHW40N60RF PDF预览

IHW40N60RF

更新时间: 2024-09-23 12:27:47
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
12页 794K
描述
powerful monolithic body diode with low forward voltage

IHW40N60RF 数据手册

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IHW40N60RF  
IH-series  
Reverse conducting IGBT  
C
Features:  
• Powerful monolithic body diode with low forward voltage  
designed for soft commutation only  
• TrenchStop® technology applications offers:  
- very tight parameter distribution  
G
E
- high ruggedness, temperature stable behavior  
- low VCEsat  
• Low EMI  
• Qualified according to JEDEC J-STD-020  
and JESD-022 for target applications  
• Pb-free lead plating; RoHS compliant  
• Complete product spectrum and PSpice Models:  
http://www.infineon.com/igbt/  
Applications:  
• Inductive cooking  
• Soft switching applications  
Type  
V†Š  
I†  
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà  
Marking  
Package  
IHW40N60RF  
600V  
40A  
1.85V  
175°C  
H40RF60  
PG-TO247-3  
Maximum ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
V†Š  
600  
V
DC collector current, limited by TÝÎÑÈà  
T† = 25°C  
T† = 100°C  
I†  
80.0  
40.0  
A
Pulsed collector current, tÔ limited by TÝÎÑÈà  
I†ÔÛÐÙ  
-
120.0  
120.0  
A
A
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C  
Diode forward current, limited by TÝÎÑÈà  
T† = 25°C  
T† = 100°C  
IŒ  
80.0  
40.0  
A
Diode pulsed current, tÔ limited by TÝÎÑÈà  
Gate-emitter voltage  
IŒÔÛÐÙ  
V•Š  
120.0  
±20  
A
V
Power dissipation T† = 25°C  
Power dissipation T† = 100°C  
305.0  
152.5  
PÚÓÚ  
W
Operating junction temperature  
Storage temperature  
TÝÎ  
-40...+175  
-55...+175  
°C  
°C  
TÙÚÃ  
Soldering temperature,  
wavesoldering 1.6 mm (0.063 in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
Rev. 2.3 2010-03-02  
1

IHW40N60RF 替代型号

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IKW40N120H3 INFINEON

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