5秒后页面跳转
捷配首页

Datasheet > 晶体管 > IGBT> IHW40N60RF
IHW40N60RF PDF预览

IHW40N60RF

更新时间： 2024-11-18 12:27:47
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
12页 794K
描述
powerful monolithic body diode with low forward voltage

阅读下载

中文翻译

获取价格

IHW40N60RF 数据手册

 浏览型号IHW40N60RF的Datasheet PDF文件第2页浏览型号IHW40N60RF的Datasheet PDF文件第3页浏览型号IHW40N60RF的Datasheet PDF文件第4页浏览型号IHW40N60RF的Datasheet PDF文件第5页浏览型号IHW40N60RF的Datasheet PDF文件第6页浏览型号IHW40N60RF的Datasheet PDF文件第7页 
IHW40N60RF  
IH-series  
Reverse conducting IGBT  
C
Features:  
• Powerful monolithic body diode with low forward voltage  
designed for soft commutation only  
• TrenchStop® technology applications offers:  
- very tight parameter distribution  
G
E
- high ruggedness, temperature stable behavior  
- low VCEsat  
• Low EMI  
• Qualified according to JEDEC J-STD-020  
and JESD-022 for target applications  
• Pb-free lead plating; RoHS compliant  
• Complete product spectrum and PSpice Models:  
http://www.infineon.com/igbt/  
Applications:  
• Inductive cooking  
• Soft switching applications  
Type  
V†Š  
I†  
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà  
Marking  
Package  
IHW40N60RF  
600V  
40A  
1.85V  
175°C  
H40RF60  
PG-TO247-3  
Maximum ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
V†Š  
600  
V
DC collector current, limited by TÝÎÑÈà  
T† = 25°C  
T† = 100°C  
I†  
80.0  
40.0  
A
Pulsed collector current, tÔ limited by TÝÎÑÈà  
I†ÔÛÐÙ  
-
120.0  
120.0  
A
A
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C  
Diode forward current, limited by TÝÎÑÈà  
T† = 25°C  
T† = 100°C  
IŒ  
80.0  
40.0  
A
Diode pulsed current, tÔ limited by TÝÎÑÈà  
Gate-emitter voltage  
IŒÔÛÐÙ  
V•Š  
120.0  
±20  
A
V
Power dissipation T† = 25°C  
Power dissipation T† = 100°C  
305.0  
152.5  
PÚÓÚ  
W
Operating junction temperature  
Storage temperature  
TÝÎ  
-40...+175  
-55...+175  
°C  
°C  
TÙÚÃ  
Soldering temperature,  
wavesoldering 1.6 mm (0.063 in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
Rev. 2.3 2010-03-02  
1
1234567...12

中文翻译

下载PDF

IHW40N60RF 替代型号

型号 品牌 替代类型 描述 数据表
IKW40N120H3 INFINEON

类似代替

 Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLA
IKW30N60H3 INFINEON

类似代替

 High speed Duopack : IGBT in Trench and Fieldstop technology
IKW15N120H3 INFINEON

类似代替

 High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti

与IHW40N60RF相关器件

型号 品牌 获取价格 描述 数据表
IHW40N60RFKSA1 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PL
IHW40N60T INFINEON

获取价格

 		Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
IHW40N60T_08 INFINEON

获取价格

 		Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
IHW40N65R5 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, GREEN, PLAS
IHW40N65R5XKSA1 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, GREEN, PLAS
IHW40N65R6 INFINEON

获取价格

 		IGBT RC Soft Switching
IHW40T120 INFINEON

获取价格

 		IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE di
IHW40T120_08 INFINEON

获取价格

 		Soft Switching Series
IHW40T120XK INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, P
IHW40T60 INFINEON

获取价格

 		Low Loss DuoPack : IGBT in TrenchStop-technology

与IHW40N60RF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证