IHW40T60

更新时间： 2024-01-22 00:46:18

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
13页	462K
描述
Low Loss DuoPack : IGBT in TrenchStop-technology

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IHW40T60 数据手册

IHW40T60

TrenchStop^®Series

Low Loss DuoPack : IGBT in TrenchStop^®-technology

with soft, fast recovery anti-parallel EmCon HE diode

Features:

•

Very low V_CE(sat)1.5 V (typ.)

Maximum junction temperature 175 °C

Short circuit withstand time – 5µs

Trench and fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low V_CE(sat)and positive temperature coefficient

Low EMI

•

PG-TO-247-3

Low gate charge

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice models : http://www.infineon.com/igbt/

Applications:

•

Inductive Cooking

Soft & Hard Switching Applications

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,max

1.55V

Marking

Package

PG-TO-247-3

IHW40T60

600V

40A

H40T60B

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

I_F

120

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Transient Gate-emitter voltage (t_p< 10 µs, D<0.01)

Short circuit withstand time²⁾

I_Fpuls

V_GE

±20

±25

t_SC

µs

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

303

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.0 Sep. 08

Power Semiconductors

12 3 4 5 6 7...13

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