Datasheet > IHW40T120_08

IHW40T120_08

更新时间： 2024-11-21 11:19:27

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
14页	356K
描述
Soft Switching Series

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中文翻译

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数据手册

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IHW40T120_08 数据手册

IHW40T120

Soft Switching Series

Low Loss DuoPack : IGBT in TrenchStop^®and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

•

Short circuit withstand time – 10µs

Designed for :

- Soft Switching Applications

- Induction Heating

•

TrenchStop^®and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- easy parallel switching capability due to positive

temperature coefficient in V_CE(sat)

Very soft, fast recovery anti-parallel EmCon^™HE diode

Low EMI

PG-TO-247-3

•

Qualified according to JEDEC¹for target applications

Application specific optimisation of inverse diode

•Pb-free lead plating; RoHS compliant

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking

Package

IHW40T120

1200V

40A

1.8V

H40T120 PG-TO247-3

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

105

V_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

19.8

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

I_Fpuls

I_FSM

Diode surge non repetitive current, t_plimited by T_jmax

T_C= 25°C, t_p= 10ms, sine halfwave

200

160

T_C= 25°C, t_p≤ 2.5µs, sine halfwave

T_C= 100°C, t_p≤ 2.5µs, sine halfwave

Gate-emitter voltage

V_GE

t_SC

±20

Short circuit withstand time²⁾

µs

V_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

P_tot

T_j

T_stg

270

-40...+150

-55...+150

Power dissipation, T_C= 25°C

Operating junction temperature

Storage temperature

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3 Sep 08

Power Semiconductors

12 3 4 5 6 7...14

中文翻译

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