Datasheet > HN58C256ASERIESHN58C257ASERIES

HN58C256ASERIESHN58C257ASERIES

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HN58C256ASERIESHN58C257ASERIES 数据手册

HN58C256A Series

HN58C257A Series

256k EEPROM (32-kword × 8-bit)

Ready/Busy and RES function (HN58C257A)

ADE-203-410D (Z)

Rev. 4.0

Oct. 24, 1997

Description

The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as

32768-word × 8-bit. They have realized high speed low power consumption and high reliability by

employing advanced MNOS memory technology and CMOS process and circuitry technology. They also

have a 64-byte page programming function to make their write operations faster.

Features

•

Single 5 V supply: 5 V ±10%

Access time: 85 ns/100 ns (max)

Power dissipation

Active: 20 mW/MHz, (typ)

Standby: 110 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 10 ms max

Automatic page write (64 bytes): 10 ms max

Ready/Busy (only the HN58C257A series)

Data polling and Toggle bit

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁵erase/write cycles (in page mode)

10 years data retention

Software data protection

Write protection by RES pin (only the HN58C257A series)

Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.

12 3 4 5 6 7...25

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型号	品牌	获取价格	描述	数据表
HN58C256AT-10	HITACHI	获取价格	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AT-10	RENESAS	获取价格	32KX8 EEPROM 5V, 100ns, PDSO28, PLASTIC, TSOP-28
HN58C256AT-10E	RENESAS	获取价格	32KX8 EEPROM 5V, 100ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28
HN58C256AT-85	HITACHI	获取价格	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C256AT-85	RENESAS	获取价格	32K X 8 EEPROM 5V, 85 ns, PDSO28, PLASTIC, TSOP-28
HN58C256AT-85E	RENESAS	获取价格	32KX8 EEPROM 5V, 85ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28
HN58C256ATI-10	ETC	获取价格	x8 EEPROM
HN58C256ATI10E	RENESAS	获取价格	HN58C256ATI10E
HN58C256ATI-85	ETC	获取价格	x8 EEPROM
HN58C256FP-15	ETC	获取价格	x8 EEPROM