Datasheet > HN58C256AT-85

HN58C256AT-85

更新时间： 2024-11-18 22:33:35

品牌	Logo	应用领域
日立 - HITACHI		内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
25页	126K
描述
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

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HN58C256AT-85 数据手册

HN58C256A Series

HN58C257A Series

256k EEPROM (32-kword × 8-bit)

Ready/Busy and RES function (HN58C257A)

ADE-203-410D (Z)

Rev. 4.0

Oct. 24, 1997

Description

The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as

32768-word × 8-bit. They have realized high speed low power consumption and high reliability by

employing advanced MNOS memory technology and CMOS process and circuitry technology. They also

have a 64-byte page programming function to make their write operations faster.

Features

•

Single 5 V supply: 5 V ±10%

Access time: 85 ns/100 ns (max)

Power dissipation

Active: 20 mW/MHz, (typ)

Standby: 110 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 10 ms max

Automatic page write (64 bytes): 10 ms max

Ready/Busy (only the HN58C257A series)

Data polling and Toggle bit

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁵erase/write cycles (in page mode)

10 years data retention

Software data protection

Write protection by RES pin (only the HN58C257A series)

Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.

12 3 4 5 6 7...25

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型号	品牌	获取价格	描述	数据表
HN58C256AT-85E	RENESAS	获取价格	32KX8 EEPROM 5V, 85ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28
HN58C256ATI-10	ETC	获取价格	x8 EEPROM
HN58C256ATI10E	RENESAS	获取价格	HN58C256ATI10E
HN58C256ATI-85	ETC	获取价格	x8 EEPROM
HN58C256FP-15	ETC	获取价格	x8 EEPROM
HN58C256FP-20	ETC	获取价格	x8 EEPROM
HN58C256P-15	ETC	获取价格	x8 EEPROM
HN58C256P-20	ETC	获取价格	x8 EEPROM
HN58C256SERIES	ETC	获取价格	x8 EEPROM
HN58C257A	ETC	获取价格	x8 EEPROM