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HN58C256AT-85E PDF预览

HN58C256AT-85E

更新时间: 2024-11-19 14:51:07
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 241K
描述
32KX8 EEPROM 5V, 85ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28

HN58C256AT-85E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSSOP, TSSOP28,.53,22针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.66
最长访问时间:85 ns命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G28长度:11.8 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00002 A子类别:EEPROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
宽度:8 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

HN58C256AT-85E 数据手册

 浏览型号HN58C256AT-85E的Datasheet PDF文件第2页浏览型号HN58C256AT-85E的Datasheet PDF文件第3页浏览型号HN58C256AT-85E的Datasheet PDF文件第4页浏览型号HN58C256AT-85E的Datasheet PDF文件第5页浏览型号HN58C256AT-85E的Datasheet PDF文件第6页浏览型号HN58C256AT-85E的Datasheet PDF文件第7页 
HN58C256A Series  
HN58C257A Series  
256k EEPROM (32-kword × 8-bit)  
Ready/Busy and RES function (HN58C257A)  
REJ03C0148-0500Z  
(Previous ADE-203-410D (Z) Rev. 4.0)  
Rev. 5.00  
Nov. 17. 2003  
Description  
Renesas Technology's HN58C256A and HN58C257A are electrically erasable and programmable ROMs  
organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability  
by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also  
have a 64-byte page programming function to make their write operations faster.  
Features  
Single 5 V supply: 5 V ±10%  
Access time: 85 ns/100 ns (max)  
Power dissipation  
Active: 20 mW/MHz, (typ)  
Standby: 110 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms max  
Automatic page write (64 bytes): 10 ms max  
Ready/Busy (only the HN58C257A series)  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 years data retention  
Software data protection  
Write protection by RES pin (only the HN58C257A series)  
Industrial versions (Temperatur range: 20 to 85°C and – 40 to 85°C) are also available.  
There are also lead free products.  
Rev.5.00, Nov. 17.2003, page 1 of 23  

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