5秒后页面跳转
HN58C65FPI-25T PDF预览

HN58C65FPI-25T

更新时间: 2024-09-24 19:01:35
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 151K
描述
8KX8 EEPROM 5V, 250ns, PDSO28, 0.400 INCH, PLASTIC, SOP-28

HN58C65FPI-25T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:SOIC
包装说明:0.400 INCH, PLASTIC, SOP-28针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.58
最长访问时间:250 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:18.3 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:5 V
认证状态:Not Qualified座面最大高度:3 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.4 mm
Base Number Matches:1

HN58C65FPI-25T 数据手册

 浏览型号HN58C65FPI-25T的Datasheet PDF文件第2页浏览型号HN58C65FPI-25T的Datasheet PDF文件第3页浏览型号HN58C65FPI-25T的Datasheet PDF文件第4页浏览型号HN58C65FPI-25T的Datasheet PDF文件第5页浏览型号HN58C65FPI-25T的Datasheet PDF文件第6页浏览型号HN58C65FPI-25T的Datasheet PDF文件第7页 
HN58C65 Series  
8192-word × 8-bit Electrically Erasable and Programmable CMOS  
ROM  
ADE-203-374A (Z)  
Rev. 1.0  
Apr. 12, 1995  
Description  
The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It  
realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS  
memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming  
function to make its erase and write operations faster.  
Features  
Single 5 V Supply  
On chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms max  
Automatic page write (32 byte): 10 ms max  
Fast access time: 250 ns max  
Low power dissipation: 20 mW/MHz typ (Active)  
2.0 mW typ (Standby)  
Data polling and Ready/Busy  
Data protection circuity on power on/power off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 year data retention  
Ordering Information  
Type No.  
Access Time  
250 ns  
Package  
HN58C65P-25  
HN58C65FP-25  
600 mil 28 pin plastic DIP (DP-28)  
28 pin plastic SOP*1 (FP-28D/DA)  
250 ns  
Note: 1. T is added to the end of the type no. for a SOP of 3.0 mm (max) thickness.  

与HN58C65FPI-25T相关器件

型号 品牌 获取价格 描述 数据表
HN58C65FPT-25 HITACHI

获取价格

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, PLASTIC, SOP-28
HN58C65P-20 HITACHI

获取价格

EEPROM, 8KX8, 200ns, Parallel, CMOS, PDIP28
HN58C65P-25 HITACHI

获取价格

8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
HN58C65P-30 HITACHI

获取价格

EEPROM, 8KX8, 300ns, Parallel, CMOS, PDIP28
HN58C65SERIES ETC

获取价格

x8 EEPROM
HN58C66FP-25 ETC

获取价格

x8 EEPROM
HN58C66FP-25T RENESAS

获取价格

8KX8 EEPROM 5V, 250ns, PDSO28, PLASTIC, MO-059AD, SOP-28
HN58C66FP-25T HITACHI

获取价格

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, PLASTIC, MO-059AD, SOP-28
HN58C66P-25 ETC

获取价格

x8 EEPROM
HN58C66SERIES ETC

获取价格

x8 EEPROM