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HN58S256AT-20E PDF预览

HN58S256AT-20E

更新时间: 2024-11-26 19:47:23
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器ISM频段光电二极管内存集成电路
页数 文件大小 规格书
17页 133K
描述
32KX8 EEPROM 3V, 200ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28

HN58S256AT-20E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1, TSSOP28,.53,22针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.79
最长访问时间:200 ns命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G28JESD-609代码:e6
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:2.5/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00001 A子类别:EEPROMs
最大压摆率:0.012 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.2 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN BISMUTH
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:16
切换位:YES宽度:8 mm
最长写入周期时间 (tWC):15 msBase Number Matches:1

HN58S256AT-20E 数据手册

 浏览型号HN58S256AT-20E的Datasheet PDF文件第2页浏览型号HN58S256AT-20E的Datasheet PDF文件第3页浏览型号HN58S256AT-20E的Datasheet PDF文件第4页浏览型号HN58S256AT-20E的Datasheet PDF文件第5页浏览型号HN58S256AT-20E的Datasheet PDF文件第6页浏览型号HN58S256AT-20E的Datasheet PDF文件第7页 
HN58S256A Series  
256 k EEPROM (32-kword × 8-bit)  
REJ03C0150-0300Z  
(Previous ADE-203-692B (Z) Rev.2.0)  
Rev. 3.00  
Feb.26.2004  
Description  
The HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit  
employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has  
a 64-byte page programming function to make the write operations faster.  
Features  
Single supply: 2.2 to 3.6 V  
Access time: 150 ns (max)/200 ns (max)  
Power dissipation:  
Active: 10 mW/MHz, (typ)  
Standby: 36 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 15 ms (max)  
Automatic page write (64 bytes): 15 ms (max)  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 years data retention  
Software data protection  
Industrial versions (Temperature range: 40 to +85°C) are also available.  
There are also lead free products.  
Rev.3.00, Feb.26.2004, page 1 of 15  

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