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HN58S256ASERIES

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HN58S256ASERIES 数据手册

HN58S256A Series

256 k EEPROM (32-kword × 8-bit)

ADE-203-692B (Z)

Rev. 2.0

Nov. 1997

Description

The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-

word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

technology. It also has a 64-byte page programming function to make the write operations faster.

Features

•

Single supply: 2.2 to 3.6 V

Access time: 150 ns (max)/200 ns (max)

Power dissipation:

Active: 10 mW/MHz, (typ)

Standby: 36 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 15 ms (max)

Automatic page write (64 bytes): 15 ms (max)

Data polling and Toggle bit

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁵erase/write cycles (in page mode)

10 years data retention

Software data protection

Industrial versions (Temperatur range:–40 to 85˚C) are also available.

12 3 4 5 6 7...17

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型号	品牌	获取价格	描述	数据表
HN58S256AT-15	HITACHI	获取价格	256 k EEPROM (32-kword x 8-bit)
HN58S256AT-15E	RENESAS	获取价格	32KX8 EEPROM 3V, 150ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28
HN58S256AT-20	HITACHI	获取价格	256 k EEPROM (32-kword x 8-bit)
HN58S256AT-20E	RENESAS	获取价格	32KX8 EEPROM 3V, 200ns, PDSO28, LEAD FREE, PLASTIC, TSOP-28
HN58S256ATI-15	ETC	获取价格	x8 EEPROM
HN58S256ATI-20	ETC	获取价格	x8 EEPROM
HN58S65A	HITACHI	获取价格	64 k EEPROM (8-kword x 8-bit) Ready/Busy function
HN58S65AISERIES	ETC	获取价格	x8 EEPROM
HN58S65ASERIES	ETC	获取价格
HN58S65AT-15	HITACHI	获取价格	64 k EEPROM (8-kword x 8-bit) Ready/Busy function