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HN58S256AT-20 PDF预览

HN58S256AT-20

更新时间: 2024-11-25 22:48:35
品牌 Logo 应用领域
日立 - HITACHI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
17页 89K
描述
256 k EEPROM (32-kword x 8-bit)

HN58S256AT-20 数据手册

 浏览型号HN58S256AT-20的Datasheet PDF文件第2页浏览型号HN58S256AT-20的Datasheet PDF文件第3页浏览型号HN58S256AT-20的Datasheet PDF文件第4页浏览型号HN58S256AT-20的Datasheet PDF文件第5页浏览型号HN58S256AT-20的Datasheet PDF文件第6页浏览型号HN58S256AT-20的Datasheet PDF文件第7页 
HN58S256A Series  
256 k EEPROM (32-kword × 8-bit)  
ADE-203-692B (Z)  
Rev. 2.0  
Nov. 1997  
Description  
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-  
word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry  
technology. It also has a 64-byte page programming function to make the write operations faster.  
Features  
Single supply: 2.2 to 3.6 V  
Access time: 150 ns (max)/200 ns (max)  
Power dissipation:  
Active: 10 mW/MHz, (typ)  
Standby: 36 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 15 ms (max)  
Automatic page write (64 bytes): 15 ms (max)  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 years data retention  
Software data protection  
Industrial versions (Temperatur range:–40 to 85˚C) are also available.  

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