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HN58V1001T-25

更新时间： 2024-11-22 22:06:15

品牌	Logo	应用领域
日立 - HITACHI		存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
22页	119K
描述
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

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HN58V1001T-25 数据手册

HN58V1001 Series

1M EEPROM (128-kword × 8-bit)

Ready/Busy and RES function

ADE-203-314G (Z)

Rev. 7.0

Oct. 31, 1997

Description

The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-

bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming

function to make the write operations faster.

Features

•

Single 3 V supply: 2.7 V to 5.5 V

Access time: 250 ns (max)

Power dissipation

Active: 20 mW/MHz, (typ)

Standby: 110 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 15 ms (max)

Automatic page write (128 bytes): 15 ms (max)

Data polling and RDY/Busy

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁴erase/write cycles (in page mode)

10 years data retention

Software data protection

Write protection by RES pin

12 3 4 5 6 7...22

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型号	品牌	获取价格	描述	数据表
HN58V1001T-25E	RENESAS	获取价格	1M EEPROM (128-kword × 8-bit) Ready/Busy and
HN58V100SERIES	ETC	获取价格	x8 EEPROM
HN58V24512I	ETC	获取价格
HN58V256A	HITACHI	获取价格	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256A	RENESAS	获取价格	256k EEPROM (32-kword × 8-bit) Ready/Busy and
HN58V256AFP-12	RENESAS	获取价格	256k EEPROM (32-kword × 8-bit) Ready/Busy and
HN58V256AFP-12	HITACHI	获取价格	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256AFP-12E	RENESAS	获取价格	256k EEPROM (32-kword × 8-bit) Ready/Busy and
HN58V256AFP-15	HITACHI	获取价格	EEPROM, 32KX8, 150ns, Parallel, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOP-28
HN58V256AFPI-12	HITACHI	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, 0.400 INCH, PLASTIC, SO-28