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HN58S65ASERIES

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HN58S65ASERIES 数据手册

HN58S65A Series

64 k EEPROM (8-kword × 8-bit)

Ready/Busy function

ADE-203-691A (Z)

Preliminary

Rev. 0.3

Nov. 1997

Description

The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word

× 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced

MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte

page programming function to make their write operations faster.

Features

•

Single supply: 2.2 to 3.6 V

Access time: 150 ns (max)

Power dissipation

Active: 10 mW/MHz (typ)

Standby: 36 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 15 ms (max)

Automatic page write (64 bytes): 15 ms (max)

Ready/Busy

Data polling and Toggle bit

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁵erase/write cycles (in page mode)

10 years data retention

Software data protection

Industrial versions (Temperature range: – 40 to + 85˚C) are also available.

Preliminary: This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

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型号	品牌	获取价格	描述	数据表
HN58S65AT-15	HITACHI	获取价格	64 k EEPROM (8-kword x 8-bit) Ready/Busy function
HN58S65ATI-15	ETC	获取价格	x8 EEPROM
HN58V1001	HITACHI	获取价格	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V1001	RENESAS	获取价格	1M EEPROM (128-kword × 8-bit) Ready/Busy and
HN58V1001FP-20	ETC	获取价格	x8 EEPROM
HN58V1001FP-25	HITACHI	获取价格	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V1001FP-25	RENESAS	获取价格	1M EEPROM (128-kword Ã 8-bit) Ready/Busy and
HN58V1001FP-25E	RENESAS	获取价格	1M EEPROM (128-kword Ã 8-bit) Ready/Busy and
HN58V1001P-20	ETC	获取价格	x8 EEPROM
HN58V1001P-25	HITACHI	获取价格	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function