Datasheet > HN58V1001P-25

HN58V1001P-25

更新时间： 2024-11-22 22:06:15

品牌	Logo	应用领域
日立 - HITACHI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
22页	119K
描述
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

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HN58V1001P-25 数据手册

HN58V1001 Series

1M EEPROM (128-kword × 8-bit)

Ready/Busy and RES function

ADE-203-314G (Z)

Rev. 7.0

Oct. 31, 1997

Description

The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-

bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming

function to make the write operations faster.

Features

•

Single 3 V supply: 2.7 V to 5.5 V

Access time: 250 ns (max)

Power dissipation

Active: 20 mW/MHz, (typ)

Standby: 110 µW (max)

•

On-chip latches: address, data, CE, OE, WE

Automatic byte write: 15 ms (max)

Automatic page write (128 bytes): 15 ms (max)

Data polling and RDY/Busy

Data protection circuit on power on/off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

10⁴erase/write cycles (in page mode)

10 years data retention

Software data protection

Write protection by RES pin

12 3 4 5 6 7...22

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型号	品牌	获取价格	描述	数据表
HN58V1001R-20	ETC	获取价格	x8 EEPROM
HN58V1001R-25	ETC	获取价格	x8 EEPROM
HN58V1001SERIES	ETC	获取价格
HN58V1001T-20	ETC	获取价格	x8 EEPROM
HN58V1001T-25	HITACHI	获取价格	1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
HN58V1001T-25	RENESAS	获取价格	1M EEPROM (128-kword × 8-bit) Ready/Busy and
HN58V1001T-25E	RENESAS	获取价格	1M EEPROM (128-kword × 8-bit) Ready/Busy and
HN58V100SERIES	ETC	获取价格	x8 EEPROM
HN58V24512I	ETC	获取价格
HN58V256A	HITACHI	获取价格	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)