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HN58V256ASERIESHN58V257ASERIES PDF预览

HN58V256ASERIESHN58V257ASERIES

更新时间: 2024-11-25 23:56:27
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HN58V256ASERIESHN58V257ASERIES 数据手册

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HN58V256A Series  
HN58V257A Series  
256k EEPROM (32-kword × 8-bit)  
Ready/Busy and RES function (HN58V257A)  
ADE-203-357D (Z)  
Rev. 4.0  
Oct. 24, 1997  
Description  
The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as  
32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by  
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also  
have a 64-byte page programming function to make their write operations faster.  
Features  
Single 3 V supply: 2.7 to 5.5 V  
Access time: 120 ns max  
Power dissipation:  
Active: 20 mW/MHz, (typ)  
Standby: 110 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms max  
Automatic page write (64 bytes): 10 ms max  
Ready/Busy (only the HN58V257A series)  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
105 erase/write cycles (in page mode)  
10 years data retention  
Software data protection  
Write protection by RES pin (only the HN58V257A series)  
Industrial versions (Temperature range: – 20 to 85˚C and – 40 to 85˚C) are also available.  

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256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
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x8 EEPROM
HN58V257AT-12 HITACHI

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256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT-12 RENESAS

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256k EEPROM (32-kword × 8-bit) Ready/Busy and