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HN4B01JE(TE85L,F) PDF预览

HN4B01JE(TE85L,F)

更新时间： 2024-02-04 18:25:22
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 339K
描述
TRANSISTOR,BJT,ARRAY,COMM EMITTER,COMPLEMENTARY,50V V(BR)CEO,150MA I(C),TSOP

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HN4B01JE(TE85L,F) 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.78Is Samacsys：N
最大集电极电流 (IC)：0.15 A最小直流电流增益 (hFE)：120
最高工作温度：150 °C极性/信道类型：NPN/PNP
最大功率耗散 (Abs)：0.1 W子类别：BIP General Purpose Small Signal
表面贴装：YES标称过渡频率 (fT)：80 MHz
Base Number Matches：1

HN4B01JE(TE85L,F) 数据手册

 浏览型号HN4B01JE(TE85L,F)的Datasheet PDF文件第2页浏览型号HN4B01JE(TE85L,F)的Datasheet PDF文件第3页浏览型号HN4B01JE(TE85L,F)的Datasheet PDF文件第4页浏览型号HN4B01JE(TE85L,F)的Datasheet PDF文件第5页浏览型号HN4B01JE(TE85L,F)的Datasheet PDF文件第6页 
HN4B01JE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)  
HN4B01JE  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
Q1:  
z High voltage and high current  
: VCEO = 50V, IC = 150mA (max)  
z
z
High hFE : hFE = 120~400  
Excellent hFE linearity  
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)  
Q2:  
z
High voltage and high current  
: VCEO = −50V, IC = −150mA (max)  
z
z
High hFE : hFE = 120~400  
Excellent hFE linearity  
1.BASE1  
2.EMITTER  
3.BASE2  
(B1)  
(E)  
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)  
(B2)  
4.COLLECTOR2 (C2)  
5.COLLECTOR1 (C1)  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
―
―
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
60  
50  
5
V
V
CBO  
CEO  
EBO  
TOSHIBA  
2-2L1C  
V
Weight: 3.0mg (typ.)  
I
150  
30  
mA  
mA  
C
Marking  
Base current  
I
B
Q2 Absolute Maximum Ratings (Ta = 25°C)  
52  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
−50  
−50  
−5  
V
V
CBO  
CEO  
EBO  
V
Equivalent Circuit (Top View)  
I
−150  
−30  
mA  
mA  
C
5
4
Base current  
I
B
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)  
Q2  
Q1  
Characteristic  
Symbol  
P *  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
100  
150  
mW  
°C  
C
1
2
3
T
j
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
*Total rating  
2000-09  
1
2014-03-01  
123456

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