Datasheet > HN4B04J(TE85L)

HN4B04J(TE85L)

更新时间： 2024-02-14 18:37:42

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	248K
描述
HN4B04J(TE85L)

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中文翻译

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技术参数
数据手册

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HN4B04J(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HN4B04J(TE85L) 数据手册

HN4B04J

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

HN4B04J

Audio Frequency General Purpose Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

Switching application

Q1:

Excellent h_FElinearity

: h_FE(2)=25 (Min.) at V_CE= −6V I_C= −400mA

Q2:

Excellent h_FElinearity

: h_FE(2)=25 (Min.) at V_CE= 6V I_C= 400mA

1.BASE1

2.EMITTER

3.BASE2

(B1)

(E)

(B2)

Q1 Absolute Maximum Ratings (Ta = 25°C)

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−35

−30

−5

CBO

CEO

EBO

JEDEC

JEITA

―

TOSHIBA

2-3L1A

−500

Weight: 0.014g (typ.)

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

500

Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

P *

Rating

Unit

Collector power dissipation

Junction temperature

300

150

°C

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating. Power dissipation per element should not exceed 200mW.

2007-11-01

12 3 4 5 6

中文翻译

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