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HN4D01JU(TE85L) PDF预览

HN4D01JU(TE85L)

更新时间: 2024-09-25 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 测试
页数 文件大小 规格书
3页 204K
描述
COMMON ANODE DIODE ARRAY,SOT-353

HN4D01JU(TE85L) 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.67Is Samacsys:N
最大正向电压 (VF):1.2 V最高工作温度:150 °C
最低工作温度:-55 °C最大功率耗散:0.2 W
最大重复峰值反向电压:85 V最大反向电流:0.5 µA
反向测试电压:80 V子类别:Other Diodes
表面贴装:YESBase Number Matches:1

HN4D01JU(TE85L) 数据手册

 浏览型号HN4D01JU(TE85L)的Datasheet PDF文件第2页浏览型号HN4D01JU(TE85L)的Datasheet PDF文件第3页 
HN4D01JU  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN4D01JU  
Ultra High Speed Switching Applications  
Unit: mm  
z Low forward voltage  
: V  
= 0.92V (typ.)  
F (3)  
z Fast reverse recovery time : t = 1.6ns (typ.)  
rr  
z Small total capacitance  
: C = 2.2pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
I
O
I
FSM  
P
200**  
150  
mW  
°C  
°C  
Junction temperature  
T
j
Storage temperature  
T
55150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
EIAJ  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
Weight: 0.0062 g (typ.)  
*: Unit rating. Total rating = unit rating × 1.5  
** :Total rating  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
I
I
I
0.61  
0.74  
0.92  
F (1)  
F
F
F
Forward voltage  
V
= 10mA  
= 100mA  
= 30V  
F (2)  
V
1.20  
0.1  
0.5  
F (3)  
I
V
V
R (1)  
R
Reverse current  
μA  
I
= 80V  
R (2)  
R
R
Total capacitance  
C
T
V
I
= 0, f = 1MHz  
2.2  
pF  
ns  
Reverse recovery time  
t
= 10mA, Fig.1  
1.6  
rr  
F
Fig.1 Reverse Recovery Time (t ) Test Circuit  
rr  
1
2007-11-01  

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