生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
针数: | 5 | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 120 V |
配置: | COMMON EMITTER, 2 ELEMENTS | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 2 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 0.3 W | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HN4C06J-GR(TE85L,F | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
HN4C08J | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 25 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, | |
HN4C08J(TE85L) | TOSHIBA |
获取价格 |
HN4C08J(TE85L) | |
HN4C51J | TOSHIBA |
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Audio Frequency General Purpose Amplifier Applications | |
HN4C51J(TE85L) | TOSHIBA |
获取价格 |
HN4C51J(TE85L) | |
HN4D01JU | TOSHIBA |
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Ultra High Speed Switching Applications | |
HN4D01JU(TE85L) | TOSHIBA |
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COMMON ANODE DIODE ARRAY,SOT-353 | |
HN4D01JU(TE85L,F) | TOSHIBA |
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COMMON ANODE DIODE ARRAY,SOT-353 | |
HN4D02JU | TOSHIBA |
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Ultra High Speed Switching Applications | |
HN4D02JU(TE85L) | TOSHIBA |
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COMMON CATHODE DIODE ARRAY,SOT-353 |