Datasheet > HN4C05JUA

HN4C05JUA

更新时间： 2024-09-24 23:56:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	147K
描述
TRANSISTOR \| BJT \| ARRAY \| COMM EMITTER \| 12V V(BR)CEO \| 400MA I(C) \| SOT-353

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HN4C05JUA 数据手册

HN4C05JU

TOSHIBA Multi Chip Discrete Device

HN4C05JU

Audio Frequency General Purpose Amplifier Applications

For Muting and Switching Applications

Unit in mm

l Low saturation voltage

l High current

: V

(1) = 15mV (typ.)

@I = 10mA / I = 0.5mA

CE (sat)

: I = 400mA (max)

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

400

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

(*) Total rating

(*)

200

125

−55~125

JEDEC

EIAJ

―

2-2L1A

TOSHIBA

Weight: 6.2 mg

stg

Marking

Pin Assignment (Top View)

000707EAA1

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

· The information contained herein is subject to change without notice.

2001-02-08 1/3

12 3

中文翻译

下载PDF

与HN4C05JUA相关器件

型号	品牌	获取价格	描述	数据表
HN4C05JUA(TE85L)	TOSHIBA	获取价格	HN4C05JUA(TE85L)
HN4C05JUB	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| COMM EMITTER \| 12V V(BR)CEO \| 400MA I(C) \| SOT-353
HN4C05JU-B	TOSHIBA	获取价格	暂无描述
HN4C06J	TOSHIBA	获取价格	Audio Frequency General Purpose Amplifier Applications
HN4C06JBL	TOSHIBA	获取价格	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN,
HN4C06J-BL(TE85L,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
HN4C06JGR	TOSHIBA	获取价格	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN,
HN4C06J-GR	TOSHIBA	获取价格	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN,
HN4C06J-GR(TE85L,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor
HN4C08J	TOSHIBA	获取价格	TRANSISTOR 800 mA, 25 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN,

与HN4C05JUA相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

HN4C05JUA

HN4C05JUA 数据手册

与HN4C05JUA相关器件

与HN4C05JUA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HN4C05JUA

HN4C05JUA 数据手册

与HN4C05JUA相关器件

与HN4C05JUA相关文章

您还可以找

您在本页遇到什么问题？