生命周期: | Obsolete | 包装说明: | R-PDSO-G6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.76 |
Is Samacsys: | N | 配置: | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 4 |
端子数量: | 6 | 最高工作温度: | 150 °C |
最大输出电流: | 0.1 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
最大功率耗散: | 0.2 W | 最大重复峰值反向电压: | 85 V |
最大反向恢复时间: | 0.0016 µs | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HN1D04FU(T5LSAN,F) | TOSHIBA |
获取价格 |
Rectifier Diode, 4 Element, 0.1A, 85V V(RRM), Silicon | |
HN1D05FE | TOSHIBA |
获取价格 |
400 V/0.1 A Switching diode, SOT-563(ES6) | |
HN1J02FU | TOSHIBA |
获取价格 |
P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) | |
HN1J02FU_07 | TOSHIBA |
获取价格 |
Silicon P Channel Mos Type High Speed Switching Applications | |
HN1K02FU | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) | |
HN1K02FU(TE85L) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
HN1K02FU_07 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type High Speed Switching Applications | |
HN1K03FU | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) | |
HN1K03FU_07 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type High Speed Switching Applications | |
HN1K04FU | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |