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HN1D04FU(T5LSAN,F) PDF预览

HN1D04FU(T5LSAN,F)

更新时间： 2024-09-16 09:26:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 209K
描述
Rectifier Diode, 4 Element, 0.1A, 85V V(RRM), Silicon

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HN1D04FU(T5LSAN,F) 数据手册

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HN1D04FU  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN1D04FU  
Ultra High Speed Switching Application  
Unit: mm  
z Low forward voltage  
: V  
= 0.90V (typ.)  
F(3)  
z Fast reverse recovery time : t = 1.6ns (typ.)  
rr  
z Small total capacitance  
: C = 0.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
I
1.ANODE1  
2.CATHODE2  
3.ANODE4  
CATHODE3  
4.ANODE3  
5.CATHODE4  
6.CATHODE1  
ANODE2  
O
I
FSM  
P
200**  
150  
mW  
°C  
°C  
Junction temperature  
T
j
US6  
Storage temperature  
T
−55 to 150  
stg  
―
―
JEDEC  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEITA  
TOSHIBA  
Weight: 6.8 g (typ.)  
1-2T1F  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per  
diode are 50% of those of the single diode.  
** : Total rating  
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
―
I
I
I
―
―
―
―
―
―
―
0.60  
0.75  
0.90  
―
―
―
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
―
= 10mA  
―
= 100mA  
1.20  
0.1  
0.5  
―
I
I
―
V
= 30V  
R
R
R
Reverse current  
μA  
―
V
V
I
= 80V  
―
Total capacitance  
C
t
―
= 0, f = 1MHz  
0.9  
1.6  
pF  
ns  
T
= 10mA (fig.1)  
Reverse recovery time  
―
―
F
rr  
Start of commercial production  
2000-12  
1
2014-03-01  
1234

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