Datasheet > HN1K02FU_07

HN1K02FU_07

更新时间： 2024-09-15 03:42:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	302K
描述
Silicon N Channel MOS Type High Speed Switching Applications

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中文翻译

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数据手册

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HN1K02FU_07 数据手册

HN1K02FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN1K02FU

High Speed Switching Applications

Unit in mm

Analog Switch Applications

z 2.5 V gate drive.

z Low threshold voltage: V_th= 0.5V~1.5V

z High speed

z Enhancement-mode

z Small package

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristic

Drain-Source voltage

Symbol

Rating

Unit

Gate-Source voltage

DC Drain current

GSS

―

JEDEC

°C

EIAJ

Drain power dissipation

Channel temperature

Storage temperature range

P *

200

TOSHIBA

Weight: 6.8mg

2-2J1C

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

2007-11-01

12 3 4 5

中文翻译

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