Datasheet > HN1L03FU_07

HN1L03FU_07

更新时间： 2024-11-06 03:42:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
7页	464K
描述
High Speed Switching Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HN1L03FU_07 数据手册

HN1L03FU

TOSHIBA Field Effect Transistor Silicon N·P Channel MOS Type

HN1L03FU

High Speed Switching Applications

Analog Switch Applications

Unit in mm

Q1, Q2 common

z Low threshold voltage

Q1: V_th= 0.8~2.5V Q2: V_th=−0.5~−1.5V

z High speed

z Small package

Q1 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-Source voltage

Symbol

Rating

Unit

Gate-Source voltage

Drain current

GSS

Q2 Absolute Maximum Ratings (Ta = 25°C)

―

JEDEC

EIAJ

Characteristic

Drain-Source voltage

Symbol

Rating

Unit

2-2J1C

TOSHIBA

Weight: 6.8mg

−20

−7

Gate-Source voltage

Drain current

GSS

Marking

−50

Absolute Maximum Ratings (Q1, Q2 Common)

(Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Drain power dissipation

Channel temperature

200

150

°C

Equivalent Circuit

(Top View)

Storage temperature range

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Total rating

2007-11-01

12 3 4 5 6 7

中文翻译

下载PDF

与HN1L03FU_07相关器件

型号	品牌	获取价格	描述	数据表
HN1V01H	TOSHIBA	获取价格	EPITAXIAL PLANAR TYPE (AM RADIO BAND TUNING APPLICATIONS)
HN1V01HA	TOSHIBA	获取价格	DIODE 16 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
HN1V01H-A	TOSHIBA	获取价格	DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
HN1V01HB	ETC	获取价格	COMMON CATHODE DIODE ARRAY\|SO
HN1V01H-B	TOSHIBA	获取价格	DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
HN1V02H	TOSHIBA	获取价格	EPITAXIAL PLANAR TYPE (AM RADIO BAND TUNING APPLICATIONS)
HN1V02H_07	TOSHIBA	获取价格	Silicon Epitaxial Planar Type AM Radio Band Tuning Applications
HN1V02HA	TOSHIBA	获取价格	DIODE VARIABLE CAPACITANCE DIODE, 1-5J1B, 8 PIN, Variable Capacitance Diode
HN1V02H-A	TOSHIBA	获取价格	DIODE 16 V, SILICON, VARIABLE CAPACITANCE DIODE, FM8, 1-5J1B, 8 PIN, Variable Capacitance
HN1V02HB	TOSHIBA	获取价格	DIODE VARIABLE CAPACITANCE DIODE, 1-5J1B, 8 PIN, Variable Capacitance Diode