Datasheet > HN1K05FU(TE85L)

HN1K05FU(TE85L)

更新时间： 2024-09-15 14:51:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	178K
描述
HN1K05FU(TE85L)

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技术参数
数据手册

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HN1K05FU(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HN1K05FU(TE85L) 数据手册

HN1K05FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN1K05FU

For Portable Devices

Unit: mm

High Speed Switching Applications

Interface Applications

•

High input impedance and extremely low drive current.

is low and it is possible to drive directly at low-voltage CMOS.

: V = 0.5 to 1.0 V

•

Suitable for high-density mounting because of a compact package.

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

JEDEC

JEITA

―

Gate-source voltage

DC drain current

GSS

100

°C

TOSHIBA

2-2J1C

Drain power dissipation

Channel temperature

Storage temperature range

P (Note 1)

200

150

Weight: 6.8 mg (typ.)

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: TOTAL rating

2007-11-01

12 3 4 5

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