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HN1D01FE(TPL3,F) PDF预览

HN1D01FE(TPL3,F)

更新时间： 2024-10-30 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
4页 225K
描述
COMMON ANODE DIODE ARRAY,TSOP

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HN1D01FE(TPL3,F) 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.59二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.2 V最高工作温度：150 °C
最低工作温度：-55 °C最大功率耗散：0.1 W
最大重复峰值反向电压：85 V最大反向电流：0.5 µA
反向测试电压：80 V子类别：Other Diodes
表面贴装：YESBase Number Matches：1

HN1D01FE(TPL3,F) 数据手册

 浏览型号HN1D01FE(TPL3,F)的Datasheet PDF文件第2页浏览型号HN1D01FE(TPL3,F)的Datasheet PDF文件第3页浏览型号HN1D01FE(TPL3,F)的Datasheet PDF文件第4页 
HN1D01FE  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN1D01FE  
Ultra High Speed Switching Application  
Unit in mm  
z HN1D02FU is composed of 2 unit of cathode common.  
z Low forward voltage : VF (3) = 0.92V (typ.)  
z Fast reverse recovery time : trr = 1.6ns (typ.)  
z Small total capacitance : CT = 2.2pF (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
1. CATHODE  
2. CATHODE  
3. ANODE  
4. CATHODE  
5. CATHODE  
6. ANODE  
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
I
O
I
FSM  
P
100**  
150  
mW  
°C  
°C  
Junction temperature  
T
j
Storage temperature  
T
−55~150  
stg  
―
―
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
1-2X1A  
TOSHIBA  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
Weight: 0.003g (typ.)  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).  
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode  
are 75% of those for a single diode.  
** : Total rating.  
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
―
I
I
I
―
―
―
―
―
―
―
0.61  
0.74  
0.92  
―
―
―
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
―
= 10mA  
―
= 100mA  
1.20  
0.1  
0.5  
―
I
I
―
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
―
= 80V  
―
Total capacitance  
C
―
= 0, f = 1MHz  
2.2  
1.6  
pF  
ns  
T
Reverse recovery time  
t
―
I
= 10mA (fig.1)  
F
―
rr  
1
2007-11-01  
1234

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