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HN1D02FU_07

更新时间： 2024-10-30 03:42:19
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
3页 360K
描述
Silicon Epitaxial Planar Type Ultra High Speed Switching Application

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HN1D02FU_07 数据手册

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HN1D02FU  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN1D02FU  
Ultra High Speed Switching Application  
Unit in mm  
z HN1D02FU is composed of 2 unit of cathode common.  
z Low forward voltage : VF (3) = 0.90V (typ.)  
z Fast reverse recovery time: trr = 1.6ns (typ.)  
z Small total capacitance : CT = 0.9pF (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
I
O
I
FSM  
P
200  
mW  
°C  
°C  
―
―
JEDEC  
Junction temperature  
T
j
125  
EIAJ  
Storage temperature  
T
−55~125  
stg  
1-2T1B  
TOSHIBA  
Weight: 6.8mg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).  
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings  
per diode is 75% of the single diode one.  
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
―
I
I
I
―
―
―
―
―
―
―
0.60  
0.72  
0.90  
―
―
―
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
―
= 10mA  
―
= 100mA  
1.20  
0.1  
0.5  
3.0  
4.0  
I
I
―
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
―
= 80V  
―
Total capacitance  
C
―
= 0, f = 1MHz  
0.9  
1.6  
pF  
ns  
T
Reverse recovery time  
t
―
I
= 10mA (fig.1)  
F
rr  
1
2007-11-01  
123

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