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HN1D02FE(TPL3) PDF预览

HN1D02FE(TPL3)

更新时间： 2024-09-13 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 测试二极管
页数 文件大小 规格书
4页 215K
描述
COMMON CATHODE DIODE ARRAY,TSOP

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中文翻译

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HN1D02FE(TPL3) 技术参数

是否Rohs认证：不符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84Is Samacsys：N
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.2 V
最高工作温度：150 °C最低工作温度：-55 °C
最大功率耗散：0.1 W最大重复峰值反向电压：85 V
最大反向电流：0.5 µA反向测试电压：80 V
子类别：Signal Diodes表面贴装：YES
Base Number Matches：1

HN1D02FE(TPL3) 数据手册

 浏览型号HN1D02FE(TPL3)的Datasheet PDF文件第2页浏览型号HN1D02FE(TPL3)的Datasheet PDF文件第3页浏览型号HN1D02FE(TPL3)的Datasheet PDF文件第4页 
HN1D02FE  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN1D02FE  
Ultra High Speed Switching Application  
Unit in mm  
z The HN1D02FU is composed of 2 common cathode units.  
z Low forward voltage : VF (3) = 0.90V (typ.)  
z Fast reverse recovery time : trr = 1.6ns (typ.)  
z Small total capacitance : CT = 0.9pF (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
1. ANODE  
2. ANODE  
3. CATHODE  
4. ANODE  
5. ANODE  
6. CATHODE  
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
300*  
100*  
2*  
mA  
mA  
A
FM  
I
O
I
FSM  
P
100**  
150  
mW  
°C  
°C  
Junction temperature  
T
j
―
―
JEDEC  
Storage temperature  
T
−55~150  
stg  
JEITA  
1-2X1B  
TOSHIBA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.003g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).  
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode  
are 75% of those for a single diode.  
**: Total rating.  
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
―
I
I
I
―
―
―
―
―
―
―
0.60  
0.72  
0.90  
―
―
―
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
―
= 10mA  
―
= 100mA  
1.20  
0.1  
0.5  
―
I
I
―
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
―
= 80V  
―
Total capacitance  
C
―
= 0, f = 1MHz  
0.9  
1.6  
pF  
ns  
T
Reverse recovery time  
t
―
I
= 10mA (fig.1)  
F
―
rr  
1
2007-11-01  
1234

中文翻译

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