Datasheet > HN1D01FU_07

HN1D01FU_07

更新时间： 2024-10-30 03:42:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
4页	336K
描述
Silicon Epitaxial Planar Type Ultra High Speed Switching Application

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中文翻译

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HN1D01FU_07 数据手册

HN1D01FU

TOSHIBA Diode Silicon Epitaxial Planar Type

HN1D01FU

Ultra High Speed Switching Application

Unit in mm

z Small package

z Low forward voltage

: V_{F (3)}= 0.92V (typ.)

z Fast reverse recovery time: t_rr= 1.6ns (typ.)

z Small total capacitance : C_T= 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

300*

100*

FSM

200

°C

Junction temperature

125

Storage temperature

−55~125

stg

―

JEDEC

EIAJ

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

1-2T1B

TOSHIBA

Weight: 6.8mg

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).

In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode

is 75% of the single diode one.

Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 10mA

= 100mA

1.20

0.1

0.5

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MHz

2.2

1.6

Reverse recovery time

= 10mA (fig.1)

2007-11-01

12 3 4

中文翻译

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