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HN1D01F_07

更新时间： 2024-10-30 03:42:19
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
4页 231K
描述
Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications

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HN1D01F_07 数据手册

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HN1D01F  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN1D01F  
Ultra-High-Speed Switching Applications  
Unit: mm  
z Small package  
z Low forward voltage  
: VF (3) = 0.92 V (typ.)  
z Fast reverse recovery time: trr = 1.6 ns (typ.)  
z Small total capacitance : CT = 2.2 pF (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10 ms)  
Power dissipation  
I
300 (*)  
100 (*)  
2 (*)  
mA  
mA  
A
FM  
I
O
I
FSM  
P
300 (*)  
125  
mW  
°C  
°C  
―
JEDEC  
Junction temperature  
T
j
JEITA  
SC-74  
1-3K1A  
Storage temperature  
T
−55~125  
stg  
TOSHIBA  
Weight: 0.015 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are  
used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single  
diode.  
Electrical Characteristics (Q , Q , Q , Q Common, Ta = 25°C)  
1
2
3
4
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1 mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
―
―
―
―
―
―
―
I
I
I
―
―
―
―
―
―
―
0.61  
0.74  
0.92  
―
―
―
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10 mA  
= 100 mA  
1.20  
0.1  
0.5  
4.0  
4.0  
I
I
V
V
V
= 30 V  
R
R
R
Reverse current  
μA  
= 80 V  
―
Total capacitance  
C
T
= 0, f = 1 MHz  
2.2  
1.6  
pF  
ns  
Reverse recovery time  
t
I
F
= 10 mA (Fig. 1)  
rr  
1
2007-11-01  
1234

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