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HN1A01FUGRTE85N PDF预览

HN1A01FUGRTE85N

更新时间： 2024-11-16 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 224K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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中文翻译

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HN1A01FUGRTE85N 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.68
最大集电极电流 (IC)：0.15 A基于收集器的最大容量：7 pF
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：200JESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：80 MHz
VCEsat-Max：0.3 VBase Number Matches：1

HN1A01FUGRTE85N 数据手册

 浏览型号HN1A01FUGRTE85N的Datasheet PDF文件第2页浏览型号HN1A01FUGRTE85N的Datasheet PDF文件第3页浏览型号HN1A01FUGRTE85N的Datasheet PDF文件第4页 
HN1A01F  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
HN1A01F  
Audio-Frequency General-Purpose Amplifier  
Unit: mm  
Applications  
z Small package (dual type)  
z High voltage and high current  
: V  
= −50 V, I = −150 mA (max)  
C
CEO  
z High hFE: h = 120~400  
FE  
z Excellent hFE linearity  
: h (I = −0.1 mA) / h (I = −2 mA) = 0.95 (typ.)  
FE  
C
FE  
C
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
−50  
−50  
V
V
CBO  
CEO  
EBO  
−5  
V
JEDEC  
―
―
I
−150  
−30  
mA  
mA  
mW  
°C  
°C  
C
JEITA  
Base current  
I
B
TOSHIBA  
2-3N1A  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
300  
C
Weight: 0.015 g (typ.)  
T
j
125  
T
−55~125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
―
V
V
V
―
―
―
―
−0.1  
−0.1  
400  
−0.3  
―
μA  
μA  
―
CBO  
CB  
EB  
CE  
E
I
―
= −5 V, I = 0  
C
EBO  
h
―
= −6 V, I = −2 mA  
120  
―
―
FE (note)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= −100 mA, I = −10 mA  
−0.1  
―
V
CE (sat)  
C
B
f
―
V
V
= −10 V, I = −1 mA  
80  
MHz  
T
CE  
C
= −10 V, I = 0,  
CB  
E
Collector output capacitance  
Note:hFE Classification  
C
―
―
4
7
pF  
ob  
f = 1 MHz  
Y (Y): 120~240, GR (G): 200~400  
) Marking Symbol  
(
1
2007-11-01  
1234

中文翻译

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