Datasheet > HN1A01FY

HN1A01FY

更新时间： 2024-02-12 17:00:28

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	152K
描述
TRANSISTOR \| BJT \| PAIR \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| TSOP

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HN1A01FY 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

HN1A01FY 数据手册

HN1A01F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

HN1A01F

Audio Frequency General Purpose Amplifier

Unit: mm

Applications

l Small package (dual type)

l High voltage and high current

: V

CEO

= −50V, I = −150mA (max)

l High h_FE: h = 120~400

l Excellent h_FElinearity

: h

(I = −0.1mA) / h

(I = −2mA) = 0.95 (typ.)

FE C

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

CBO

CEO

EBO

−5

−150

−30

°C

JEDEC

―

Base current

EIAJ

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

TOSHIBA

Weight: 0.015g

2-3N1A

125

−55~125

stg

Total rating

Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)

Test

Characteristic

Symbol

Test Condition

= −50V, I = 0

Min

Typ.

Max

Unit

Circuit

―

Collector cut-off current

Emitter cut-off current

DC current gain

―

−0.1

400

−0.3

―

µA

―

CBO

―

= −5V, I = 0

EBO

―

= −6V, I = −2mA

120

―

FE (note)

Collector-emitter saturation voltage

Transition frequency

―

= −100mA, I = −10mA

―

−0.1

―

CE (sat)

―

= −10V, I = −1mA

MHz

= −10V, I = 0,

Collector output capacitance

―

f = 1MHz

Note: hFE Classification

Y (Y): 120~240, GR (G): 200~400

(

) Marking Symbol

2001-06-07

12 3 4

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