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HN1A01FU-Y(TE85L,F) PDF预览

HN1A01FU-Y(TE85L,F)

更新时间: 2024-01-01 02:58:13
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
4页 139K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

HN1A01FU-Y(TE85L,F) 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.69最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

HN1A01FU-Y(TE85L,F) 数据手册

 浏览型号HN1A01FU-Y(TE85L,F)的Datasheet PDF文件第1页浏览型号HN1A01FU-Y(TE85L,F)的Datasheet PDF文件第2页浏览型号HN1A01FU-Y(TE85L,F)的Datasheet PDF文件第4页 
HN1A01FU  
(Q1,Q2 Common)  
3
2001-06-07  

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