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HMP164U6EFR6C-Y5 PDF预览

HMP164U6EFR6C-Y5

更新时间: 2024-09-17 19:35:55
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
29页 246K
描述
DDR DRAM Module, 64MX64, 0.45ns, CMOS, PDMA240

HMP164U6EFR6C-Y5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:DIMM, DIMM240,40
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:0.45 ns最大时钟频率 (fCLK):333 MHz
I/O 类型:COMMONJESD-30 代码:R-PDMA-N240
内存密度:4294967296 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:64端子数量:240
字数:67108864 words字数代码:64000000
最高工作温度:55 °C最低工作温度:
组织:64MX64输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:8192最大待机电流:0.04 A
子类别:DRAMs最大压摆率:1.04 mA
标称供电电压 (Vsup):1.8 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HMP164U6EFR6C-Y5 数据手册

 浏览型号HMP164U6EFR6C-Y5的Datasheet PDF文件第2页浏览型号HMP164U6EFR6C-Y5的Datasheet PDF文件第3页浏览型号HMP164U6EFR6C-Y5的Datasheet PDF文件第4页浏览型号HMP164U6EFR6C-Y5的Datasheet PDF文件第5页浏览型号HMP164U6EFR6C-Y5的Datasheet PDF文件第6页浏览型号HMP164U6EFR6C-Y5的Datasheet PDF文件第7页 
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb E version  
This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 1Gb version E DDR2  
SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver-  
sion E based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm  
width form factor of industry standard. It is suitable for easy interchange and addition.  
FEATURES  
JEDEC standard Double Data Rate2 Syn-  
chrnous DRAMs (DDR2 SDRAMs) with 1.8V +/  
- 0.1V Power Supply  
Programmable Burst Length 4 / 8 with both  
sequential and interleave mode  
Auto refresh and self refresh supported  
8192 refresh cycles / 64ms  
All inputs and outputs are compatible with  
SSTL_1.8 interface  
Serial presence detect with EEPROM  
8 Bank architecture  
DDR2 SDRAM Package: 60ball  
FBGA(128Mx8),  
84ball FBGA(64Mx16)  
Posted CAS  
Programmable CAS Latency 3 ,4 ,5, 6  
OCD (Off-Chip Driver Impedance Adjustment)  
ODT (On-Die Termination)  
133.35 x 30.00 mm form factor  
RoHS compliant & Halogen-free  
Fully differential clock operations (CK & CK)  
ORDERING INFORMATION  
# of  
DRAMs  
# of  
ranks  
Part Name  
Density  
Org.  
Materials  
ECC  
HMP164U6EFR6C-C4/Y5/S6/S5  
HMP112U6EFR8C-C4/Y5/S6/S5  
HMP112U7EFR8C-C4/Y5/S6/S5  
HMP125U6EFR8C-C4/Y5/S6/S5  
HMP125U7EFR8C-C4/Y5/S6/S5  
512MB  
1GB  
64Mx64  
128Mx64  
128Mx72  
256Mx64  
256Mx72  
4
8
1
1
1
2
2
Halogen free None  
Halogen free None  
1GB  
9
Halogen free  
Halogen free None  
Halogen free ECC  
ECC  
2GB  
16  
18  
2GB  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.1 / Jun. 2008  
1

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