型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT30F126 |
获取价格 |
MOSFET 600V 200A IGBT |
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GT30F131 |
获取价格 |
MOSFET 600V 200A IGBT |
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|
GT30F132 |
获取价格 |
MOSFET 600V 200A IGBT |
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GT30G122 | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
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GT30G123 | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
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GT30G124 | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
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GT30G125 | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors |
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GT30J101 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT |
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GT30J101_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT High Power Switching Applications |
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GT30J110SRA | TOSHIBA |
获取价格 |
1100 V/60 A IGBT, Built-in Diodes, TO-3P(N) |
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