Datasheet > GT30J324_06

GT30J324_06

更新时间： 2024-09-27 03:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
7页	191K
描述
Silicon N Channel IGBT High Power Switching Applications

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GT30J324_06 数据手册

GT30J324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J324

High Power Switching Applications

Unit: mm

Fast Switching Applications

•

Fourth-generation IGBT

Enhancement mode type

Fast switching (FS): Operating frequency up to 50 kHz (reference)

High speed: t = 0.05 μs (typ.)

Low switching loss: E = 1.00 mJ (typ.)

: E = 0.80 mJ (typ.)

off

•

Low saturation voltage: V

= 2.0 V (typ.)

CE (sat)

FRD included between emitter and collector

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

600

±20

CES

GES

1 ms

Collector current

JEDEC

―

Emitter-collector forward

current

JEITA

1 ms

TOSHIBA

2-16C1C

Collector power dissipation

(Tc = 25°C)

170

Weight: 4.6 g (typ.)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance (IGBT)

Thermal resistance (diode)

0.735

1.90

°C/W

th (j-c)

Equivalent Circuit

Marking

Collector

TOSHIBA

GT30J324

Part No. (or abbreviation code)

Lot No.

Gate

Emitter

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6 7

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