Datasheet > GT30J341,Q

GT30J341,Q

更新时间： 2024-01-20 15:34:33

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
10页	295K
描述
Insulated Gate Bipolar Transistor

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GT30J341,Q 技术参数

GT30J341

Discrete IGBTs Silicon N-Channel IGBT

GT30J341

1. Applications

•

Motor Drivers

2. Features

(1) Sixth generation

(2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A)

(3) High junction temperature: Tj = 175 (max)

(4) FRD included between emitter and collector

3. Packaging and Internal Circuit

1: Gate

2: Collector (Heat sink)

3: Emitter

TO-3P(N)

Start of commercial production

2012-03

2014-01-07

Rev.2.0

12 3 4 5 6 7...10

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