Datasheet > GT30J121_06

GT30J121_06

更新时间： 2024-02-21 18:16:45

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
6页	182K
描述
Silicon N Channel IGBT High Power Switching Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT30J121_06 数据手册

GT30J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121

High Power Switching Applications

Unit: mm

Fast Switching Applications

•

Fourth-generation IGBT

Enhancement mode type

Fast switching (FS): Operating frequency up to 50 kHz (reference)

High speed: t = 0.05 μs (typ.)

Low switching loss: E = 1.00 mJ (typ.)

: E = 0.80 mJ (typ.)

off

•

Low saturation voltage: V

= 2.0 V (typ.)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

600

±20

CES

GES

JEDEC

―

Collector current

1 ms

JEITA

Collector power dissipation

(Tc = 25°C)

170

TOSHIBA

2-16C1C

Junction temperature

150

°C

Weight: 4.6 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Thermal resistance

Symbol

Max

Unit

0.735

°C/W

th (j-c)

Marking

TOSHIBA

GT30J121

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6

中文翻译

下载PDF

与GT30J121_06相关器件

型号	品牌	获取价格	描述	数据表
GT30J122	TOSHIBA	获取价格	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
GT30J122A	TOSHIBA	获取价格	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switchi
GT30J126	TOSHIBA	获取价格	High Power Switching Applications Fast Switching Applications
GT30J301	TOSHIBA	获取价格	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT30J311	TOSHIBA	获取价格	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT30J322	TOSHIBA	获取价格	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
GT30J324	TOSHIBA	获取价格	Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324(Q)	TOSHIBA	获取价格	IGBT DUAL 600V 30A TO-3PN
GT30J324_06	TOSHIBA	获取价格	Silicon N Channel IGBT High Power Switching Applications
GT30J341	TOSHIBA	获取价格	Discrete IGBTs Silicon N-Channel IGBT