是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | End Of Life | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.24 | Is Samacsys: | N |
其他特性: | HIGH SPEED | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 400 ns | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 400 ns | 标称接通时间 (ton): | 300 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT30J122A | TOSHIBA |
获取价格 |
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switchi | |
GT30J126 | TOSHIBA |
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High Power Switching Applications Fast Switching Applications | |
GT30J301 | TOSHIBA |
获取价格 |
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT30J311 | TOSHIBA |
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N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
GT30J322 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | |
GT30J324 | TOSHIBA |
获取价格 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT30J324(Q) | TOSHIBA |
获取价格 |
IGBT DUAL 600V 30A TO-3PN | |
GT30J324_06 | TOSHIBA |
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Silicon N Channel IGBT High Power Switching Applications | |
GT30J341 | TOSHIBA |
获取价格 |
Discrete IGBTs Silicon N-Channel IGBT | |
GT30J341,Q | TOSHIBA |
获取价格 |
Insulated Gate Bipolar Transistor |