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GT30J122 PDF预览

GT30J122

更新时间: 2024-09-27 03:40:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 498K
描述
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

GT30J122 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:End Of Life包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.24Is Samacsys:N
其他特性:HIGH SPEED最大集电极电流 (IC):30 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):400 ns门极-发射极最大电压:20 V
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):400 ns标称接通时间 (ton):300 ns
Base Number Matches:1

GT30J122 数据手册

 浏览型号GT30J122的Datasheet PDF文件第2页浏览型号GT30J122的Datasheet PDF文件第3页浏览型号GT30J122的Datasheet PDF文件第4页浏览型号GT30J122的Datasheet PDF文件第5页浏览型号GT30J122的Datasheet PDF文件第6页 
GT30J122  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT30J122  
4TH GENERATION IGBT  
Unit: mm  
CURRENT RESONANCE INVERTER SWITCHING  
APPLICATIONS  
Enhancement mode type  
High speed: t = 0.25μs (Typ.) (I = 50A)  
f
C
Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
±20  
30  
V
V
CES  
GES  
DC  
I
C
Collector current  
A
1 ms  
I
100  
CP  
Collector power dissipation  
(Tc = 25°C)  
P
75  
W
C
Junction temperature  
T
150  
°C  
°C  
JEDEC  
j
Storage temperature range  
T
stg  
55~150  
JEITA  
TOSHIBA  
2-16F1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 5.8 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-01  

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