Datasheet > 晶体管 > IGBT> GT30J122A

GT30J122A

更新时间： 2024-09-27 12:35:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关晶体管功率因数校正双极性晶体管
页数	文件大小	规格书
7页	199K
描述
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications

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GT30J122A 技术参数

GT30J122A

Discrete IGBTs Silicon N-Channel IGBT

GT30J122A

1. Applications

•

Dedicated to Current-Resonant Inverter Switching Applications

•

Dedicated to Partial-Switching Power Factor Correction (PFC) Applications

Note: The product(s) described herein should not be used for any other application.

2. Features

(1) 4th generation

(2) Enhancement mode

(3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A)

(4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)

3. Packaging and Internal Circuit

1 : Gate

2 : Collector

3 : Emitter

TO-3P(N)

2012-06-25

Rev.1.0

12 3 4 5 6 7

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