型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT30J322 | TOSHIBA |
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N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS) | |
GT30J324 | TOSHIBA |
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Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
GT30J324(Q) | TOSHIBA |
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IGBT DUAL 600V 30A TO-3PN | |
GT30J324_06 | TOSHIBA |
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Silicon N Channel IGBT High Power Switching Applications | |
GT30J341 | TOSHIBA |
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Discrete IGBTs Silicon N-Channel IGBT | |
GT30J341,Q | TOSHIBA |
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Insulated Gate Bipolar Transistor | |
GT30N135SRA | TOSHIBA |
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1350 V/30 A IGBT, Built-in Diodes, TO-247 | |
GT3-16DP-2.5DSA | HRS |
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Antenna, Sensor, and Communications Trunk Line Connections | |
GT3-16DP-2.5DSA(70) | HRS |
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Board Connector, 16 Contact(s), 2 Row(s), Male, Straight, 0.098 inch Pitch, Solder Termina | |
GT320 | CDE |
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Ceramic Capacitor, Multilayer, Ceramic, 3000V, 5% +Tol, 5% -Tol, SL, 500ppm/Cel TC, 0.0002 |