Datasheet > GT30G125

GT30G125

更新时间： 2024-02-18 22:30:20

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
73页	1582K
描述
Bipolar Small-Signal Transistors

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GT30G125 数据手册

SEMICONDUCTOR GENERAL CATALOG

Transistors

Bipolar Small-Signal Transistors

Junction FETs

Combination Products of Different Type Devices

MOSFETs

Bipolar Power Transistors

Radio-Frequency Bipolar Small-Signal Transistors

Radio-Frequency Small-Signal FETs

Radio-Frequency Power MOSFETs

IGBTs

Phototransistors (for Optical Sensors)

2010/9ꢀSCE0004K

12 3 4 5 6 7...73

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型号	品牌	获取价格	描述	数据表
GT30J101	TOSHIBA	获取价格	Silicon N Channel IGBT
GT30J101_06	TOSHIBA	获取价格	Silicon N Channel IGBT High Power Switching Applications
GT30J110SRA	TOSHIBA	获取价格	1100 V/60 A IGBT, Built-in Diodes, TO-3P(N)
GT30J121	TOSHIBA	获取价格	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121_06	TOSHIBA	获取价格	Silicon N Channel IGBT High Power Switching Applications
GT30J122	TOSHIBA	获取价格	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
GT30J122A	TOSHIBA	获取价格	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switchi
GT30J126	TOSHIBA	获取价格	High Power Switching Applications Fast Switching Applications
GT30J301	TOSHIBA	获取价格	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
GT30J311	TOSHIBA	获取价格	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)