Datasheet > GT30J101_06

GT30J101_06

更新时间： 2024-02-09 09:53:16

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
6页	194K
描述
Silicon N Channel IGBT High Power Switching Applications

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GT30J101_06 数据手册

GT30J101

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J101

High Power Switching Applications

Unit: mm

•

Third-generation IGBT

Enhancement mode type

High speed: t = 0.30 μs (max)

Low saturation voltage: V

= 2.7 V (max)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

600

±20

CES

GES

Collector current

1 ms

Collector power dissipation

(Tc = 25°C)

155

Junction temperature

150

°C

JEDEC

―

Storage temperature range

stg

−55 to 150

JEITA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

Weight: 4.6 g

2-16C1C

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Marking

TOSHIBA

GT30J101

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-11-01

12 3 4 5 6

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