Datasheet > GT10J303_06

GT10J303_06

更新时间： 2024-09-10 03:39:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管高功率电源
页数	文件大小	规格书
7页	474K
描述
SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

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中文翻译

获取价格

数据手册

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GT10J303_06 数据手册

GT10J303

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

GT10J303

HIGH POWER SWITCHING APPLICATIONS

Unit: mm

MOTOR CONTROL APPLICATIONS

z Third-generation IGBT

z Enhancement mode type

z High speed

: t = 0.30μs (Max.) (I = 10A)

z Low saturation voltage

: V (sat) = 2.7V (Max.) (I = 10A)

CE C

z FRD included between emitter and collector

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector−Emitter Voltage

600

±20

CES

Gate-Emitter Voltage

GES

1ms

Collector Current

JEDEC

JEITA

⎯

Emitter−Collector Forward

Current

1ms

Collector Power Dissipation

(Tc = 25°C)

TOSHIBA

Weight:

2-10R1C

g (typ.)

Junction Temperature

150

°C

Storage Temperature Range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

EQUIVALENT CIRCUIT

MARKING

10J303

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2006-10-31

12 3 4 5 6 7

中文翻译

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