GT10J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10J321
High Power Switching Applications
Unit: mm
Fast Switching Applications
•
•
•
•
•
Fourth-generation IGBT
Enhancement mode type
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t = 0.03 μs (typ.)
f
Low switching loss : E = 0.26 mJ (typ.)
on
: E = 0.18 mJ (typ.)
off
•
•
Low saturation voltage: V
FRD included between emitter and collector
= 2.0 V (typ.)
CE (sat)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
600
±25
5
V
V
CES
GES
@ Tc = 100°C
Continuous Collector
current
I
A
A
A
C
@ Tc = 25°C
10
Pulsed collector current
Diode forward current
I
20
CP
DC
I
10
F
JEDEC
―
―
Pulsed
I
20
FP
JEITA
@ Tc = 100°C
@ Tc = 25°C
11
Collector power
dissipation
P
W
C
TOSHIBA
Weight: 1.7 g
2-10R1C
29
Junction temperature
T
150
−55~150
°C
°C
j
Storage temperature range
T
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance (IGBT)
Thermal resistance (diode)
R
R
4.31
4.90
°C/W
°C/W
th (j-c)
th (j-c)
Equivalent Circuit
Marking
Collector
Gate
K2662
Part No. (or abbreviation code)
Lot No.
Emitter
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01